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D600(V2) データシート - Inchange Semiconductor
メーカー
Inchange Semiconductor
DESCRIPTION
• High Collector Current-IC= 1.0A
• High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
• Good Linearity of hFE
• Low Saturation Voltage
• Complement to Type 2SB631
APPLICATIONS
• Designed for power amplifier applications
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
