D1409A(2009) データシート - Toshiba
メーカー
Toshiba
High Voltage Switching Applications
• High DC current gain: hFE = 600 (min.) (VCE = 2 V, IC = 2 A)
• Monolithic construction with built-in base-emitter shunt resistor
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) ( Rev : 1997 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON)
Unspecified
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) ( Rev : 1999 )
Toshiba
