D1006 データシート - Renesas Electronics
メーカー

Renesas Electronics
DESCRIPTION
The 2SD1006, 1007 are designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits.
FEATURES
● High Collector to Emitter Voltage : VCEO > 120 V (2SD1007)
: VCEO > 100 V (2SD1006)
● Complement to PNP type 2SB805, 806 respectively.
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Renesas Electronics