MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode

FEATUREs
• Composite type with a P-Channel Sillicon MOSFET (CPH3309) and a Schottky Barrier Diode (SBS010M) contained in one package facilitating high-density mounting.
[MOSFET]
   • Low ON-resistance.
   • Ultrahigh-speed switching.
   • Low voltage drive.
[SBD]
   • Short reverse recovery time.
   • Low forward voltage.