CPD76V データシート - Central Semiconductor
メーカー
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 32 x 32 MILS
Die Thickness 7.1 MILS
Anode Bonding Pad Area 26 x 26 MILS
Top Side Metalization Al - 20,000Å
Back Side Metalization Au - 12,000Å
1.0A SCHOTTKY BARRIER DIODE
Won-Top Electronics
1.0A SCHOTTKY BARRIER DIODE
Won-Top Electronics
1.0A SCHOTTKY BARRIER DIODE
Won-Top Electronics
1.0A SCHOTTKY BARRIER DIODE
Zibo Seno Electronic Engineering Co.,Ltd
1.0A SCHOTTKY BARRIER DIODE
Won-Top Electronics
1.0A SCHOTTKY BARRIER DIODE
Zibo Seno Electronic Engineering Co.,Ltd
1.0A SCHOTTKY BARRIER DIODE
Zibo Seno Electronic Engineering Co.,Ltd
1.0A SCHOTTKY BARRIER DIODE
Zibo Seno Electronic Engineering Co.,Ltd
Schottky Diode Schottky Diode Chip
Central Semiconductor
SCHOTTKY BARRIER DIODE 90V 1.0A
Shenzhen Taychipst Electronic Co., Ltd
