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CPD65-BAV45 データシート - Central Semiconductor

CPD65-BAV45 image

部品番号
CPD65-BAV45

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Central Semiconductor 

The CPD65-BAV45 is a silicon 50mA, 35 Volt diode ideal for low leakage applications.

MECHANICAL SPECIFICATIONS:
   Die Size 11.8 x 11.8 MILS
   Die Thickness 8.0 MILS
   Anode Bonding Pad Size 2.35 MILS DIAMETER
   Top Side Metalization Al – 15,000Å
   Back Side Metalization Au – 18,000Å
   Scribe Alley Width 2.5 MILS
   Wafer Diameter 4 INCHES
   Gross Die Per Wafer 75,000


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