部品番号
CPD65-BAV45
コンポーネント説明
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Central Semiconductor
The CPD65-BAV45 is a silicon 50mA, 35 Volt diode ideal for low leakage applications.
MECHANICAL SPECIFICATIONS:
Die Size 11.8 x 11.8 MILS
Die Thickness 8.0 MILS
Anode Bonding Pad Size 2.35 MILS DIAMETER
Top Side Metalization Al – 15,000Å
Back Side Metalization Au – 18,000Å
Scribe Alley Width 2.5 MILS
Wafer Diameter 4 INCHES
Gross Die Per Wafer 75,000