CP712 データシート - Central Semiconductor
メーカー
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 75 x 75 MILS
Die Thickness 9.0 MILS
Base Bonding Pad Area 17 x 12 MILS
Emitter Bonding Pad Area 31 x 12 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Ti/Ni/Ag - 11,300Å
Power Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
Power Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor Corp
Power Transistor PNP - Amp/Switch Transistor Chip ( Rev : 2003 )
Central Semiconductor
Power Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
PNP - Amp/Switch Transistor Chip Power Transistors
Central Semiconductor
Small Signal Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
Small Signal Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
Small Signal Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
Small Signal Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
Small Signal Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
