CP681 データシート - Central Semiconductor
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Central Semiconductor
The CP681 is a silicon PNP RF transistor designed for general purpose RF amplifi er and mixer applications.
MECHANICAL SPECIFICATIONS:
Die Size 15 x 15 MILS
Die Thickness 7.9 MILS
Base Bonding Pad Area 2.3 MIL DIAMETER
Emitter Bonding Pad Area 2.3 MIL DIAMETER
Top Side Metalization Al-Si – 13,000Å
Back Side Metalization Au – 12,000Å
Scribe Alley Width 3.0 MILS
Wafer Diameter 5 INCHES
Gross Die Per Wafer 74,000
Low Leakage Diode Die 50mA, 35 Volt
Central Semiconductor
Schottky Rectifier Die 1.0 Amp, 20 Volt
Central Semiconductor
PNP - Small Signal Transistor Die 150mA, 35 Volt
Central Semiconductor
PNP - Saturated Switch Transistor Die 0.2 Amp, 15 Volt
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PNP - High Current Transistor Die 5.0 Amp, 25 Volt
Central Semiconductor
PNP - General Purpose Transistor Die 0.6 Amp, 60 Volt
Central Semiconductor
PNP - High Voltage Transistor Die 0.6 Amp, 150 Volt
Central Semiconductor
PNP Transistor Bare Die
Silicon Supplies
PNP - Low VCE(SAT) Transistor Die 1.0 Amp, 25 Volt
Central Semiconductor
PNP Transistor Bare Die
Unspecified