CP611 データシート - Central Semiconductor
メーカー
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 80 x 99 MILS
Die Thickness 12.5 ± 1 MILS
Base Bonding Pad Area 12 x 32 MILS
Emitter Bonding Pad Area 13 x 46 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Ag - 16,000Å
Power Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
Power Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
Power Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor Corp
PNP - Amp/Switch Transistor Chip Power Transistors
Central Semiconductor
Small Signal Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
Small Signal Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
Small Signal Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
Small Signal Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
Small Signal Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
Smal Signal Transistor PNP - Amp/Switch Transistor Chip ( Rev : 2010 )
Central Semiconductor
