CP394R データシート - Central Semiconductor
メーカー

Central Semiconductor
PROCESS DETAILS
Die Size 15.7 x 15.7 MILS
Die Thickness 3.9 MILS
Gate Bonding Pad Area 3.9 x 3.9 MILS
Source Bonding Pad Area 9.1 x 8.1 MILS
Top Side Metalization Al-Si - 35,000Å
Back Side Metalization Au - 12,000Å
Small Signal MOSFET Transistor N-Channel Enhancement-Mode Transistor Chip
Central Semiconductor
Small Signal MOSFET Transistor N- Channel Enhancement-Mode Transistor Chip ( Rev : 2002 )
Central Semiconductor
Small Signal MOSFET Transistor N- Channel Enhancement-Mode Transistor Chip
Central Semiconductor
Small Signal MOSFET Transistor N-Channel Enhancement-Mode Transistor Chip
Central Semiconductor
Small Signal MOSFET Transistor N- Channel Enhancement-Mode Transistor Chip
Central Semiconductor
Small Signal MOSFET Transistor N-Channel Enhancement-Mode Transistor Chip
Central Semiconductor
Small Signal MOSFET Transistor N-Channel Enhancement-Mode MOSFET Chip
Central Semiconductor
Small Signal MOSFET Transistor P-Channel Enhancement-Mode Transistor Chip
Central Semiconductor
Small Signal MOSFET Transistor P-Channel Enhancement-Mode Transistor Chip
Central Semiconductor
Small Signal MOSFET Transistor P-Channel Enhancement-Mode MOSFET Chip
Central Semiconductor