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CP324
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Central Semiconductor
CP324(2002) データシート - Central Semiconductor
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 21.65 x 21.65 MILS
Die Thickness 9.0 MILS
Gate Bonding Pad Area 5.5 x 5.5 MILS
Source Bonding Pad Area 5.9 x 13.8 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 12,000Å
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