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CP317 データシート - Central Semiconductor

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部品番号
CP317

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  2002  

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Central-Semiconductor
Central Semiconductor 

PROCESS DETAILS
   Process                             EPITAXIAL PLANAR
   Die Size                             14.5 x 14.5 MILS
   Die Thickness                    9.0 MILS
   Base Bonding Pad Area    2.4 x 2.2 MILS
   Emitter Bonding Pad Area 2.4 x 2.2 MILS
   Top Side Metalization         Al - 30,000Å
   Back Side Metalization       Au - 18,000Å

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