25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier

   Cree’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10-lead metal/ceramic flanged package (CMPA801B025F) or small formfactor pill package (CMPA801B025P) for optimal electrical and thermal performance.

FEATUREs
• 8.5 - 11.0 GHz Operation
• 37 W POUT typical
• 16 dB Power Gain
• 36 % Typical PAE
• 50 Ohm internally matched
• <0.1 dB Power droop

APPLICATIONs
• Marine Radar
• Communications
• Satellite Communication Uplink