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CJP08N60 データシート - Jiangsu Changjiang Electronics Technology Co., Ltd

CJP08N60 image

部品番号
CJP08N60

コンポーネント説明

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4 Pages

File Size
826.3 kB

メーカー
Jiangsu
Jiangsu Changjiang Electronics Technology Co., Ltd 

GENERAL DESCRIPTION
   This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.


FEATURE
• High Current Rating
• Lower RDS(on)
• Lower Capacitance
• Lower Total Gate Charge
• Tighter VSD Specifications
• Avalanche Energy Specified


部品番号
コンポーネント説明
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