BUZ110S データシート - Infineon Technologies
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Infineon Technologies
SIPMOS Power Transistor
Product Summary
Drain source voltage VDS 55V
Drain-Source on-state resistance RDS(on) 0.01Ω
Continuous drain current ID 80A
Features
• N channel
• Enhancement mode
• Avalanche rated
• dv/dtrated
• 175 ˚C operating temperature
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SIPMOS® Power-Transistor ( Rev : 2008 )
Infineon Technologies
SIPMOS® Power-Transistor ( Rev : 2012 )
Infineon Technologies
SIPMOS® Power-Transistor
Infineon Technologies
SIPMOS® Power-Transistor
Infineon Technologies
SIPMOS® Power-Transistor
Infineon Technologies
SIPMOS® Power-Transistor ( Rev : 2007 )
Infineon Technologies
SIPMOS® Power-Transistor
Infineon Technologies
SIPMOS® Power-Transistor
Infineon Technologies
SIPMOS® Power-Transistor
Infineon Technologies
SIPMOS® Power-Transistor ( Rev : 2011 )
Infineon Technologies