Description
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.

FEATUREs
■ Very low on-state resistance
■ Q101 compliant
■ 185 °C rated
■ Logic level compatible.

APPLICATIONs
■ Automotive systems
■ 12 V loads
■ Motors, lamps and solenoids
■ General purpose power switching.

Quick reference data
■ EDS(AL)S ≤ 242 mJ
■ RDSon = 7.6 mΩ (typ)
■ ID ≤ 75 A
■ Ptot ≤ 167 W.