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BUK6217-55C データシート - Nexperia B.V. All rights reserved

BUK6217-55C image

部品番号
BUK6217-55C

Other PDF
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page
14 Pages

File Size
694.5 kB

メーカー
NEXPERIA
Nexperia B.V. All rights reserved 

General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.


FEATUREs and benefits
◾ AEC Q101 compliant
◾ Suitable for standard and logic level
   gate drive sources
◾ Suitable for thermally demanding
   environments due to 175 °C rating


APPLICATIONs
◾ 12 V and 24 V Automotive systems
◾ Electric and electro-hydraulic power
   steering
◾ Motors, lamps and solenoid control
◾ Start-Stop micro-hybrid applications
◾ Transmission control
◾ Ultra high performance power
   switching


部品番号
コンポーネント説明
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メーカー
N-channel TrenchMOS intermediate level FET
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Nexperia B.V. All rights reserved
N-channel TrenchMOS intermediate level FET
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NXP Semiconductors.
N-channel TrenchMOS intermediate level FET
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NXP Semiconductors.
N-channel TrenchMOS intermediate level FET
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Philips Electronics
N-channel TrenchMOS intermediate level FET
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Philips Electronics
N-channel TrenchMOS intermediate level FET
PDF
Nexperia B.V. All rights reserved
N-channel TrenchMOS intermediate level FET
PDF
Nexperia B.V. All rights reserved
N-channel TrenchMOS intermediate level FET
PDF
Nexperia B.V. All rights reserved

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