BTD965N3-R-T1-G データシート - Cystech Electonics Corp.
メーカー
Cystech Electonics Corp.
Features
• Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A
• Excellent DC current gain characteristics
• Complementary to BTB1386N3
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
