BTD1862I3 データシート - Cystech Electonics Corp.
メーカー
Cystech Electonics Corp.
Features
• Low VCE(sat), VCE(sat)=0.4 V (typical), at IC / IB = 2A / 0.5A
• Excellent current gain characteristics
• Complementary to BTB1240I3
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
