BSS138 データシート - PANJIT INTERNATIONAL
メーカー

PANJIT INTERNATIONAL
FEATURES
• RDS(ON), VGS@10V,IDS@500mA=3Ω
• RDS(ON), VGS@4.5V,IDS@200mA=4Ω
• RDS(ON), VGS@2.5V,IDS@100mA=6Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected
• In compliance with EU RoHS 2002/95/EC directives
50V N-Channel Enhancement Mode MOSFET – ESD Protected
PANJIT INTERNATIONAL
50V N-Channel Enhancement Mode MOSFET – ESD Protected
PANJIT INTERNATIONAL
50V N-Channel Enhancement Mode MOSFET – ESD Protected
PANJIT INTERNATIONAL
50V N-Channel Enhancement Mode MOSFET – ESD Protected
Unspecified
ESD protected N-Channel Enhancement Mode MOSFET
Cystech Electonics Corp.
ESD protected N-Channel Enhancement Mode MOSFET
Cystech Electonics Corp.
ESD protected N-Channel Enhancement Mode MOSFET
Cystech Electonics Corp.
60V N-Channel Enhancement Mode MOSFET - ESD Protected
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected ( Rev : 2010 )
PANJIT INTERNATIONAL
60V ESD Protected N-Channel Enhancement Mode MOSFET
HY ELECTRONIC CORP.