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BSS123 データシート - Nexperia B.V. All rights reserved
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Nexperia B.V. All rights reserved
GENERAL DESCRIPTION
N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology.
FEATURES
• ’Trench’ technology
• Extremely fast switching
• Logic level compatible
• Subminiature surface mounting package
APPLICATIONs:-
• Relay driver
• High-speed line driver
• Telephone ringer
N-channel TrenchMOS logic level FET
NXP Semiconductors.
N-channel TrenchMOS logic level FET
NXP Semiconductors.
N-channel TrenchMOS logic level FET
NXP Semiconductors.
N-channel TrenchMOS logic level FET
NXP Semiconductors.
N-channel TrenchMOS logic level FET
NXP Semiconductors.
N-channel TrenchMOS logic level FET
NXP Semiconductors.
N-channel TrenchMOS logic level FET
NXP Semiconductors.
N-channel TrenchMOS logic level FET
NXP Semiconductors.
N-channel TrenchMOS logic level FET
NXP Semiconductors.
N-channel TrenchMOS logic level FET
NXP Semiconductors.