DESCRIPTION
The BS62LV2006 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144 words by 8 bits and operates from a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.3uA at 3.0V/25oC and maximum access time of 55ns at 3.0V/85°C.

FEATURES
• Wide Vcc operation voltage : 2.4V~5.5V
• Very low power consumption :
    Vcc = 3.0V C-grade : 22mA (@55ns) operating current
                        I- grade : 23mA (@55ns) operating current
                        C-grade : 17mA (@70ns) operating current
                        I- grade : 18mA (@70ns) operating current
                        0.3uA (Typ.) CMOS standby current
    Vcc = 5.0V C-grade : 53mA (@55ns) operating current
                        I- grade : 55mA (@55ns) operating current
                        C-grade : 43mA (@70ns) operating current
                        I- grade : 45mA (@70ns) operating current
                        1.0uA (Typ.) CMOS standby current
• High speed access time :
    -55 55ns
    -70 70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE2, CE1, and OE options