DESCRIPTION
The BS616LV2025 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide range of 4.5V to 5.5V supply voltage.

FEATURES
• Very low operation voltage : 4.5 ~ 5.5V
• Very low power consumption :
    Vcc = 5.0V C-grade: 40mA (Max.) operating current
                       I -grade: 45mA (Max.) operating current
                       0.6uA (Typ.) CMOS standby current
• High speed access time :
    -70 70ns (Max.) at Vcc = 5.0V
    -55 55ns (Max.) at Vcc = 5.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
• I/O Configuration x8/x16 selectable by CIO, LB and UB pin