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BLF6G38-25(2013) データシート - NXP Semiconductors.

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部品番号
BLF6G38-25

コンポーネント説明

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14 Pages

File Size
262 kB

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NXP
NXP Semiconductors. 

General description
25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz.


FEATUREs and benefits
■ Typical 1-carrier N-CDMA performance (single carrier IS-95 with pilot, paging, sync
   and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the
   CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 3400 MHz, 3500 MHz
   and 3600 MHz, a supply voltage of 28 V and an IDq of 225 mA:
   ◆ Average output power = 4.5 W
   ◆ Power gain = 15 dB
   ◆ Drain efficiency = 24 %
   ◆ ACPR885k = -45 dBc in 30 kHz bandwidth
■ Easy power control
■ Integrated ESD protection
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (3400 MHz to 3800 MHz)
■ Internally matched for ease of use
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)


APPLICATIONs
■ RF power amplifiers for base stations and multicarrier applications in the
   3400 MHz to 3800 MHz frequency range


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