
NXP Semiconductors.
General description
25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz.
FEATUREs and benefits
■ Typical 1-carrier N-CDMA performance (single carrier IS-95 with pilot, paging, sync
and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the
CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 3400 MHz, 3500 MHz
and 3600 MHz, a supply voltage of 28 V and an IDq of 225 mA:
◆ Average output power = 4.5 W
◆ Power gain = 15 dB
◆ Drain efficiency = 24 %
◆ ACPR885k = -45 dBc in 30 kHz bandwidth
■ Easy power control
■ Integrated ESD protection
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (3400 MHz to 3800 MHz)
■ Internally matched for ease of use
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
APPLICATIONs
■ RF power amplifiers for base stations and multicarrier applications in the
3400 MHz to 3800 MHz frequency range