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BFP620(2004) データシート - Infineon Technologies

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部品番号
BFP620

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Infineon
Infineon Technologies 

NPN Silicon Germanium RF Transistor

• High gain low noise RF transistor
• Provides outstanding performance
   for a wide range of wireless applications
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.7 dB at 1.8 GHz
   Outstanding noise figure F = 1.3 dB at 6 GHz
• Maximum stable gain
   Gms = 21.5 dB at 1.8 GHz
   Gma = 11 dB at 6 GHz
• Gold metallization for extra high reliability


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