BFP620(2004) データシート - Infineon Technologies
メーカー

Infineon Technologies
NPN Silicon Germanium RF Transistor
• High gain low noise RF transistor
• Provides outstanding performance
for a wide range of wireless applications
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.7 dB at 1.8 GHz
Outstanding noise figure F = 1.3 dB at 6 GHz
• Maximum stable gain
Gms = 21.5 dB at 1.8 GHz
Gma = 11 dB at 6 GHz
• Gold metallization for extra high reliability
NPN Silicon Germanium RF Transistor
Infineon Technologies
NPN Silicon Germanium RF Transistor
Infineon Technologies
NPN SILICON GERMANIUM RF TRANSISTOR
NEC => Renesas Technology
NPN Silicon Germanium RF Transistor* ( Rev : 2004 )
Infineon Technologies
NPN Silicon Germanium RF Transistor* ( Rev : 2007 )
Infineon Technologies
NPN Silicon Germanium RF Transistor*
Infineon Technologies
NPN Silicon Germanium RF Transistor ( Rev : 2008 )
Infineon Technologies
NPN Silicon Germanium RF Transistor
Infineon Technologies
NPN SILICON GERMANIUM RF TRANSISTOR
Renesas Electronics
NPN SILICON GERMANIUM RF TRANSISTOR
Renesas Electronics