Low Noise Silicon Bipolar RF Transistor

• General purpose low noise amplifier for low voltage, low current applications
• High ESD robustness, typical 1500 V (HBM)
• Low minimum noise figure 1.1 dB at 1.8 GHz
• High linearity: output compression point OP1dB = 13 dBm @ 3 V, 35 mA, 1.8 GHz
• Pb-free (RoHS compliant) and halogen-free package with visible leads
• Qualification report according to AEC-Q101 available