部品番号
BFG590W
コンポーネント説明
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Philips Electronics
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package.
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
APPLICATIONS
• MATV/CATV amplifiers and RF
communications subscriber
equipment in the GHz range
• Ideally suitable for use in class-A,
(A)B and C amplifiers with either
pulsed or continuous drive.