部品番号
BFG520W/X
コンポーネント説明
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Philips Electronics
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package.
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.
APPLICATIONS
RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless
telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV) and repeater
amplifiers in fibre-optic systems.