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BF1206F データシート - Philips Electronics

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部品番号
BF1206F

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20 Pages

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184.8 kB

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Philips
Philips Electronics 

General description
The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads.
The source and substrate are interconnected. Internal bias circuits enable Direct Current (DC) stabilization and a very good cross-modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is encapsulated in a SOT666 micro-miniature plastic package.


FEATUREs
■ Two low noise gain controlled amplifiers in a single package
■ Superior cross-modulation performance during AGC
■ High forward transfer admittance
■ High forward transfer admittance to input capacitance ratio
■ Suited for 3 volt applications


APPLICATIONs
■ Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High Frequency (UHF) applications with 3 V supply voltage, such as digital and analog television tuners

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