HOME >>> New Jersey Semiconductor >>>
BD809 PDF
BD809 データシート - New Jersey Semiconductor
メーカー

New Jersey Semiconductor
DESCRIPTION
• DC Current Gain -
: hFE=30@lc=2A
• Collector-Emitter Sustaining Voltage-
: VCEO(sus)= 80V(Min)
• Complement to Type BD810
APPLICATIONS
• Designed for use in high power audio amplifiers utilizing
complementary or quasi complementary circuits.
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor