BAW56DW データシート - Transys Electronics Limited
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Transys Electronics Limited
SWITCHING DIODE
FEATURES
Power dissipation PD: 200 mW (Tamb=25℃)
Collector current IF: 150 mA
Collector-base voltage VR: 75 V
Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
SOT-363 Plastic-Encapsulated Transistors
Transys Electronics Limited
SOT-363 Plastic-Encapsulate Diode
Willas Electronic Corp.
SOT-363 Plastic-Encapsulate Diode
Willas Electronic Corp.
SOT-363 Plastic-Encapsulate Diode
Willas Electronic Corp.
SOT-363 Plastic-Encapsulate Diode
Transys Electronics Limited
SOT-523 Plastic-Encapsulated Diode
Transys Electronics Limited
SOT-323 Plastic-Encapsulated Diode
Transys Electronics Limited
SOT-323 Plastic-Encapsulated Diode
Transys Electronics Limited
SOT-523 Plastic-Encapsulated Diode
Transys Electronics Limited
SOT-323 Plastic-Encapsulated Diode
Transys Electronics Limited