部品番号
BAT754L
コンポーネント説明
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NXP Semiconductors.
DESCRIPTION
Three internal (galvanic) isolated silicon epitaxial Schottky barrier diodes in a SOT363 small SMD plastic package.
FEATURES
• Very low forward voltage
• Guard ring protected
• Low diode capacitance
• Three independent diodes in a small plastic SMD package.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes
• Low power consumption applications (e.g. hand-held applications).