Product description
This Infineon cost optimized RF PIN diode is designed for low distortion switches that require to hold off large RF voltages, and is best suited for frequencies as high as 3 GHz. Its nominal 50 μm I-region width, combine with the typical 1.55 μs carrier lifetime, result in a diode with low forward resistance and low distortion characteristics.

FEATURE list
• Low signal distortion, charge carrier lifetime trr = 1.55 µs (typical)
• Very low capacitance C = 0.22 pF (typical) at voltage VR = 0 and frequencies f ≥ 1 GHz
• Low forward resistance RF = 2.3 Ω (typical) at forward current IF = 10 mA and frequency f = 100 MHz
• Industry standard SOT23-3 package (2.9 mm x 2.4 mm x 1 mm)
• Pb-free, RoHS compliant and halogen-free

Potential applications
Optimized for low bias current RF and high-speed interface switches and attenuators
• Wireless communication
• High speed data networks