Description
   The AT52BR1664A(T) combines a single plane 16-Mbit Flash and a 4-megabit SRAM in a stacked 66-ball CBGA package.
   Both devices operate at 2.7V to 3.3 in the industrial temperature range.

FEATUREs
• 16-Mbit (x16) Flash and 4-megabit SRAM
• 2.7V to 3.3V Operating Voltage
• Low Operating Power
   – 40 mA Operating Current (Maximum)
   – 35 µA Standby Current (Maximum)
• Industrial Temperature Range

Flash
• 2.7V to 3.3V Read/Write
• Access Time – 70 ns, 90 ns
• Sector Erase Architecture
   – Thirty-one 32K Word (64K Byte) Sectors with Individual Write Lockout
   – Eight 4K Word (8K Byte) Sectors with Individual Write Lockout
• Fast Word Program Time – 12 µs
• Suspend/Resume Feature for Erase and Program
   – Supports Reading and Programming from Any Sector by Suspending Erase of a
      Different Sector
   – Supports Reading Any Word by Suspending Programming of Any Other Word
• Low-power Operation
   – 12 mA Active
   – 13 µA Standby
• Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
• VPP Pin for Write Protection and Accelerated Program/Erase Operations
• RESET Input for Device Initialization
• Sector Lockdown Support
• Top/Bottom Boot Block Configuration
• 128-bit Protection Register
• Minimum 100,000 Erase Cycles

SRAM
• 4-megabit (256K x 16)
• 2.7V to 3.3V VCC Operating Voltage
• 70 ns Access Time
• Fully Static Operation and Tri-state Output
• 1.2V (Min) Data Retention