AP30G120SW データシート - Advanced Power Electronics Corp
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Advanced Power Electronics Corp
Features
▼ High Speed Switching
▼ Low Saturation Voltage
VCE(sat)=3.0V@IC=30A
▼ CO-PAK, IGBT With FRD
▼ RoHS Complian
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD.
Advanced Power Electronics Corp
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD
Alpha and Omega Semiconductor
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD.
Advanced Power Electronics Corp
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD.
Advanced Power Electronics Corp
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD.
Advanced Power Electronics Corp
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD.
Advanced Power Electronics Corp
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD.
Advanced Power Electronics Corp
N-channel Insulated-Gate Bipolar Transistor
Silicon Standard Corp.
N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR
Silicon Standard Corp.
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Advanced Power Electronics Corp