部品番号
AO8810L
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Alpha and Omega Semiconductor
AO8810L データシート - Alpha and Omega Semiconductor
Alpha and Omega Semiconductor
General Description
The AO8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO8810L is offered in a lead-free package. Standard Product AO8810 is Pb-free (meets ROHS & Sony 259 specifications). AO8810L is a Green Product ordering option. AO8810 and AO8810L are electrically identical.
FEATUREs
VDS (V) = 20V
ID = 7 A (VGS = 4.5V)
RDS(ON) < 20mΩ (VGS = 4.5V)
RDS(ON) < 24mΩ (VGS = 2.5V)
RDS(ON) < 32mΩ (VGS = 1.8V)
ESD Rating: 2000V HBM
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Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor ( Rev : 2003 )
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
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