General Description
The AO6603 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6603 is Pb-free (meets ROHS & Sony 259 specifications). AO6603L is a Green Product ordering option. AO6603 and AO6603L are electrically identical.

FEATUREs
   n-channel                          p-channel
   VDS (V) = 20V                  -30V
   ID = 1.7 (VGS = 4.5V)       -2.5A
   RDS(ON)
   < 225mΩ (VGS = 4.5V)    < 135mΩ (VGS = -10V)
   < 290mΩ (VGS = 2.5V)    < 185mΩ (VGS = 2.5V)
   < 425mΩ (VGS = 1.8V)    < 265mΩ (VGS = 1.8V)