AO5804EL データシート - Alpha and Omega Semiconductor
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Alpha and Omega Semiconductor
General Description
The AO5804E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AO5804E and AO5804EL are electrically identical.
-RoHS Compliant
-AO5804EL is Halogen Free
FEATUREs
VDS (V) = 20V
ID = 0.5 A (VGS = 4.5V)
RDS(ON) < 0.55Ω (VGS = 4.5V)
RDS(ON) < 0.68Ω (VGS = 2.5V)
RDS(ON) < 0.80Ω (VGS = 1.8V)
ESD PROTECTED!
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics