AO5800E データシート - Alpha and Omega Semiconductor
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Alpha and Omega Semiconductor
General Description
The AO5800E uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V, in the small SC89-6L footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. RoHS compliant
FEATUREs
VDS (V) = 60V
ID = 0.4A (VGS = 10V)
RDS(ON) < 1.6Ω (VGS = 10V)
RDS(ON) < 1.9Ω (VGS = 4.5V)
ESD PROTECTED!
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics