General Description
The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch,and for a host of other applications.

FEATUREs
   n-channel                                   p-channel
   VDS (V) = 30V                           -30V
   ID = 6.9A                                    -6A
   RDS(ON)                                    RDS(ON)
   < 28mΩ (VGS=10V)                   < 35mΩ (VGS = 10V)
   < 42mΩ (VGS=4.5V)                  < 58mΩ (VGS = 4.5V)