
Advanced Micro Devices
GENERAL DESCRIPTION
The Am29SL800D is an 8 Mbit, 1.8 V volt-only Flashmemory organized as 1,048,576 bytes or 524,288 words. The device is offered in 48-pin TSOP and 48- ball FBGA packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed and erased in-system with a single 1.8 volt VCC supply. No VPP is for write or erase operations. The device can also be programmed in standard EPROM programmers.
DISTINCTIVE CHARACTERISTICS
◾ Single Power Supply Operation
— 1.65 to 2.2 V for read, program, and erase
operations
— Ideal for battery-powered applications
◾ Manufactured on 0.23 µm Process Technology
— Compatible with 0.32 µm Am29SL800C device
◾ High Performance
— Access times as fast as 90 ns
◾ Ultra Low Power Consumption (Typical Values at
5 MHz)
— 0.2 µA Automatic Sleep Mode current
— 0.2 µA standby mode current
— 5 mA read current
— 15 mA program/erase current
◾ Flexible Sector Architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
fifteen 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
fifteen 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection Features:
A hardware method of locking a sector to prevent any
program or erase operations within that sector
Sectors can be locked in-system or via programming
equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
◾ Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
◾ Top or Bottom Boot Block Configurations
Available
◾ Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
◾ Minimum 1,000,000 Erase Cycle Guarantee Per
Sector
◾ 20-Year Data Retention at 125°C
◾ Package Option
— 48-pin TSOP
— 48-ball FBGA