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A715 データシート - New Jersey Semiconductor
メーカー
New Jersey Semiconductor
DESCRIPTION
• Good Linearity of hFE
• Collector-Emitter Breakdown Voltage-
V(BR)CEO= -35V (Min)
• Complement to Type 2SC1162
APPLICATIONS
• Designed for use in low frequency power amplifier
applications.
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor
