A1771(1997) データシート - Toshiba
メーカー
Toshiba
HIGH CURRENT SWITCHING APPLICATIONS
• Low Collector Saturation Voltage: VCE (sat)= −0.4 V (Max.) (IC= −6 A)
• High Speed Switching: tstg= 0.6 μs (Typ.)
• High Emitter-Base Breakdown Voltage: V (BR) EBO= −14 V (Min.)
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2004 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2006 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2009 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2004 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2013 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
