A1615 データシート - Galaxy Semi-Conductor
メーカー
Galaxy Semi-Conductor
FEATURES
● Large current capacity:
IC(DC):-10A,IC(pulse):-15A.
● High hFE and low collector saturation
voltage:hFE=200MIN.(@VCE=-2V,IC=-0.5A)
VCE(sat)≤-0.25V(@IC=-4A,IB=-0.05A)
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
Renesas Electronics
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
Renesas Electronics
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
Renesas Electronics
PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING
Renesas Electronics
PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
