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A1103 データシート - New Jersey Semiconductor
メーカー
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
V(BR)CEo=-100V(Min)
• Good Linearity of hFE
APPLICATIONS
• Designed for audio power amplifier applications
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor
