Description
This Power MOSFET is produced using KIA semi`s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

FEATUREs
◾ RDS(on)=1.15Ω @ VGS=10V
◾ Low gate charge ( typical 22nC)
◾ High ruggedness
◾ Fast switching
◾ 100% avalanche tested
◾ Improved dv/dt capability