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54NM65ND(2012) データシート - STMicroelectronics

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部品番号
54NM65ND

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14 Pages

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539.4 kB

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ST-Microelectronics
STMicroelectronics 

Description
The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.


FEATUREs
■ The worldwide best RDS(on) * area amongst the
   fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
   capabilities


APPLICATION
   Switching applications


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コンポーネント説明
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