50N06G-TQ2-R(2019) データシート - Unisonic Technologies
メーカー

Unisonic Technologies
DESCRIPTION
The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt.
It is mainly suitable electronic ballast, and low power switching mode power appliances.
FEATURES
* RDS(ON) ≤ 23mΩ @ VGS=10V, ID=25A
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability
50A, 60V N-CHANNEL POWER MOSFET ( Rev : 2013 )
Unisonic Technologies
50A, 60V N-CHANNEL POWER MOSFET
Unisonic Technologies
50A,60V Heatsink Planar N-Channel Power MOSFET
Thinki Semiconductor Co., Ltd.
50A,60V Heatsink Planar N-Channel Power MOSFET
Thinki Semiconductor Co., Ltd.
50A,60V Heatsink Planar N-Channel Power MOSFET
Unspecified
50A,60V Heatsink Planar N-Channel Power MOSFET
Thinki Semiconductor Co., Ltd.
50A,60V Heatsink Planar N-Channel Power MOSFET
Thinki Semiconductor Co., Ltd.
50A,60V Heatsink Planar N-Channel Power MOSFET
Thinki Semiconductor Co., Ltd.
50A,60V Heatsink Planar N-Channel Power MOSFET
Thinki Semiconductor Co., Ltd.
50A,60V Heatsink Planar N-Channel Power MOSFET
Thinki Semiconductor Co., Ltd.