NTMFS4926N : Power MOSFET
FEATUREs
1. Low RDS(on)to Minimize Conduction Losses
2. Low Capacitance to Minimize Driver Losses
3. Optimized Gate Charge to Minimize Switching Losses
4. Optimized for 5 V, 12 V Gate Drives
5. These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 93 A
ON Semiconductor
MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 65 A
ON Semiconductor
MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 38 A
ON Semiconductor
MOSFET – Power, Single, N-Channel, SO-8FL 30 V, 191 A
ON Semiconductor
MOSFET – Power, Single, N-Channel, SO-8FL 30 V, 104 A
ON Semiconductor
MOSFET – Power, Single, N-Channel, SO-8FL 30 V, 0.9 m, 303 A
ON Semiconductor
Power MOSFET 30 V, 0.9 m, 303 A, Single N−Channel, SO−8FL ( Rev : 2014 )
ON Semiconductor
N-channel 30 V, 0.018 Ω typ., 8 A, P-channel 30 V, 0.045 Ω typ., 5 A Power MOSFET in a SO-8 package ( Rev : 2014 )
STMicroelectronics
Dual n-channel 30 V, 0.09 Ω, 3 A SO-8 STripFET™ Power MOSFET ( Rev : 2009 )
STMicroelectronics
Dual N-channel 30 V, 0.039 Ω, 4 A SO-8 STripFET™ Power MOSFET
STMicroelectronics