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3SK290 PDF
3SK290 データシート - Hitachi -> Renesas Electronics
メーカー
Hitachi -> Renesas Electronics
Features
• Low noise figure.
NF = 2.3 dB Typ. at f = 900 MHz
• High gain.
PG = 19.3 dB Typ. at f = 900 MHz
APPLICATION
UHF RF amplifier
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Silicon N-Channel Dual Gate MOS FET
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Silicon N-Channel Dual Gate MOS FET
Hitachi -> Renesas Electronics
Silicon N-Channel Dual Gate MOS FET
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Silicon N-Channel Dual Gate MOS FET
Hitachi -> Renesas Electronics
Silicon N-Channel Dual Gate MOS FET
Hitachi -> Renesas Electronics
Silicon N-channel dual gate MOS-FET
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Silicon N-Channel Dual Gate MOS FET
Hitachi -> Renesas Electronics
Silicon N-Channel Dual Gate MOS FET
Hitachi -> Renesas Electronics
Silicon N-Channel Dual Gate MOS FET
Renesas Electronics
Silicon N-Channel Dual Gate MOS FET
Renesas Electronics
